
Dislocation Analysis in Beam-Sensitive Organic Crystals Using Low-Dose SED
APPLICATION OF LOW-DOSE SED IN BEAM-SENSITIVE ORGANIC CRYSTALS
A new application note explores how single-exposure, low-dose scanning electron diffraction enables the characterisation of dislocations in long-chain hydrocarbon crystals at low-dose conditions.
In this case study, researchers applied the SED technique using TESCAN TENSOR analytical STEM to investigate dislocations in n-hentriacontane (C₃₁H₆₄), a model system for paraffin waxes. Using sub-10 e⁻/Ų electron dose and virtual dark field imaging, the team determined the Burgers vector and dislocation character without requiring high-dose imaging or prior crystallographic assumptions.
This methodology facilitates:
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In-plane dislocation analysis from a single SED acquisition
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Identification of Burgers vector geometry using virtual dark field images
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Structural mapping in highly beam-sensitive organic crystalline organic materials
The results suggest routes for characterization and understanding defect-mediated behaviours in molecular crystals, which might be potentially applied to the engineering of next-generation materials, organic optoelectronics, or even in the formulation of pharmaceuticals.
About TESCAN TENSOR:
TESCAN TENSOR is an analytical STEM microscope optimised for advanced materials characterisation. It offers fast, multimodal imaging and diffraction workflows with integrated beam precession, automated alignments, and high-speed, high-sensitivity direct electron detection. Designed for accessibility without compromising on performance, TENSOR enables real-time 4D-STEM data processing and efficient low-dose measurements even for challenging, dose-sensitive materials.